Try a new search

Format these results:

Searched for:

person:kwonc01

in-biosketch:true

Total Results:

21


Development of ramp-edge SNS junctions using highly stable normal-metal barrier materials [Meeting Abstract]

Jia, QX; Fan, Y; Kwon, C; Mombourquette, C; Reagor, D; Cantor, R; Zhou, JP; Gim, Y; Jones, C; McDevitt, JT; Goodenough, JB
By using a cation-modified and corrosion-resistant compound of (PryGd0.6-y)Ca0.4Ba1.6La0.4Cu3O7 (y = 0.4, 0.5, and 0.6) as normal-metal barrier materials, high-temperature superconducting Josephson junctions have been fabricated in a ramp-edge superconductor/normal-metal/superconductor (SNS) configuration. We have tuned the Pr substitution level in order to achieve the optimal electrical resistivity of the barrier layer for high-performance SNS junctions. The junctions fabricated with these normal-metal barriers show well-defined RSJ-like current vs voltage characteristics at liquid-nitrogen temperature. The junction performance is mainly controlled by the N-layer instead of the interface. We have also fabricated de superconducting quantum interference devices based on ramp-edge SNS technology with these normal-metal barriers. The ratio of peak-to-peak voltage modulation of the superconducting quantum interference devices to the IcRn product is more than 30%.
ISI:000081964500133
ISSN: 1051-8223
CID: 1390952