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Mott insulating state in ultraclean carbon nanotubes

Deshpande, Vikram V; Chandra, Bhupesh; Caldwell, Robert; Novikov, Dmitry S; Hone, James; Bockrath, Marc
The Mott insulating state is a manifestation of strong electron interactions in nominally metallic systems. Using transport spectroscopy, we showed that an energy gap exists in nominally metallic carbon nanotubes and occurs in addition to the band gap in small-band-gap nanotubes, indicating that carbon nanotubes are never metallic. This gap has a magnitude of approximately 10 to 100 milli-electron volts and a nanotube radius (r) dependence of approximately 1/r, which is in good agreement with predictions for a nanotube Mott insulating state. We also observed neutral excitations within the gap, as predicted for this state. Our results underscore nanotubes' exceptional capabilities for use in studying correlated electron phenomena in one dimension
PMID: 19119228
ISSN: 1095-9203
CID: 146359

Blinking statistics correlated with nanoparticle number

Wang, Siying; Querner, Claudia; Fischbein, Michael D; Willis, Lauren; Novikov, Dmitry S; Crouch, Catherine H; Drndic, Marija
We report fluorescence of single semiconductor nanorods (NRs) and few-NR clusters, correlated with transmission electron microscopy for direct determination of the number of NRs present in a single fluorescent source. For samples drop-cast from dilute solutions, we show that the majority of the blinking sources (approximately 75%) are individual NRs while the remaining sources are small clusters consisting of up to 15 NRs. Clusters containing two or three NRs exhibit intermittent fluorescence intensity trajectories, I(t), similar to those of individual NRs. The associated statistical parameters of on- and off-time probability densities for two- and three-NR clusters are indistinguishable from those of individual NRs. In contrast, statistically distinguishable blinking parameters are observed for clusters of five or more particles. In particular, the 'truncation time' of the on-time probability density, i.e., the time characterizing the transition from a power law to an exponential decay, was found to increase superlinearly with the number of particles. Our long (2.4 x 10(4) s) blinking measurements also directly reveal the previously unobserved truncation of the power law distribution of the off-times for single nanoparticles
PMID: 18844430
ISSN: 1530-6984
CID: 146360

Transverse NMR relaxation in magnetically heterogeneous media

Novikov, D S; Kiselev, V G
We consider the NMR signal from a permeable medium with a heterogeneous Larmor frequency component that varies on a scale comparable to the spin-carrier diffusion length. We focus on the mesoscopic part of the transverse relaxation, that occurs due to dispersion of precession phases of spins accumulated during diffusive motion. By relating the spectral lineshape to correlation functions of the spatially varying Larmor frequency, we demonstrate how the correlation length and the variance of the Larmor frequency distribution can be determined from the NMR spectrum. We corroborate our results by numerical simulations, and apply them to quantify human blood spectra.
PMID: 18824379
ISSN: 1096-0856
CID: 3856522

Effect of disorder on a graphene p-n junction

Fogler, M. M.; Novikov, D. S.; Glazman, L. I.; Shklovskii, B. I.
We propose the theory of transport in a gate-tunable graphene p-n junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction resistance is dominated by either diffusive or ballistic contribution. We find the conditions for observing ballistic transport and show that in existing devices they are satisfied only marginally. We also simulate numerically the trajectories of charge carriers and illustrate challenges in realizing more delicate ballistic effects, such as Veselago lensing.
ISI:000253764200139
ISSN: 1098-0121
CID: 3856452

Critical conductance of a one-dimensional doped Mott insulator

Garst, M.; Novikov, D. S.; Stern, Ady; Glazman, L. I.
We consider the two-terminal conductance of a one-dimensional Mott insulator undergoing the commensurate-incommensurate quantum phase transition to a conducting state. We treat the leads as Luttinger liquids. At a specific value of compressibility of the leads, corresponding to the Luther-Emery point, the conductance can be described in terms of the free propagation of noninteracting fermions with charge e/root 2. At that point, the temperature dependence of the conductance across the quantum phase transition is described by a Fermi function. The deviation from the Luther-Emery point in the leads changes the temperature dependence qualitatively. In the metallic state, the low-temperature conductance is determined by the properties of the leads, and is described by the conventional Luttinger-liquid theory. In the insulating state, conductance occurs via activation of e/root 2 charges, and is independent of the Luttinger-liquid compressibility.
ISI:000252862900061
ISSN: 2469-9950
CID: 3856442

Screening of a hypercritical charge in graphene

Fogler, M. M.; Novikov, D. S.; Shklovskii, B. I.
Screening of a large external charge in graphene is studied. The charge is assumed to be displaced away or smeared over a finite region of the graphene plane. The initial decay of the screened potential with distance is shown to follow the 3/2 power. It gradually changes to the Coulomb law outside of a hypercritical core whose radius is proportional to the external charge.
ISI:000251986500015
ISSN: 1098-0121
CID: 3856422

Elastic scattering theory and transport in graphene

Novikov, D. S.
Electron properties of graphene are described in terms of Dirac fermions. Here we thoroughly outline the elastic scattering theory for the two-dimensional massive Dirac fermions in the presence of an axially symmetric potential. While the massless limit is relevant for pristine graphene, keeping finite mass allows for generalizations onto situations with broken symmetry between the two sublattices and provides a link to the scattering theory of electrons in a parabolic band. We demonstrate that the Dirac theory requires short-distance regularization for potentials which are more singular than 1/r. The formalism is then applied to scattering off a smooth short-ranged potential. Next, we consider the Coulomb potential scattering, where the Dirac theory is consistent for a point scatterer only for the effective impurity strength below 1/2. From the scattering phase shifts we obtain the exact Coulomb transport cross section in terms of the impurity strength. The results are relevant for transport in graphene in the presence of impurities that do not induce scattering between the Dirac points in the Brillouin zone.
ISI:000251986600116
ISSN: 1098-0121
CID: 3856432

Numbers of donors and acceptors from transport measurements in graphene

Novikov, D. S.
A method is suggested to separately determine the surface density of positively and negatively charged impurities that limit the mobility in a graphene monolayer. The method is based on the exact result for the transport cross section, according to which the massless carriers are scattered more strongly when they are attracted to a charged impurity than when they are repelled from it. (c) 2007 American Institute of Physics.
ISI:000249322900023
ISSN: 0003-6951
CID: 3856512

Transverse field effect in graphene ribbons

Novikov, D S
It is shown that a graphene ribbon, a ballistic strip of carbon monolayer, may serve as a quantum wire whose electronic properties can be continuously and reversibly controlled by an externally applied transverse voltage. The electron bands of armchair-edge ribbons undergo dramatic transformations: The Fermi surface fractures, Fermi velocity and effective mass change sign, and excitation gaps are reduced by the transverse field. These effects are manifest in the conductance plateaus, van Hove singularities, thermopower, and activated transport. The control over one-dimensional bands may help enhance effects of electron correlations, and be utilized in device applications.
PMID: 17930776
ISSN: 1079-7114
CID: 3856492

Two-dimensional holes in GaAsHIGFETs: Fabrication methods and transport measurements

Huang, Jian; Novikov, D. S.; Tsui, D. C.; Pfeiffer, L. N.; West, K. W.
We present a fabrication process and results of transport measurements of a number of p-channel heterojunction-insulated-gate field-effect transistors (HIGFETs). Without intentional doping in HIGFETs, the disorder is likely to be less than that in the modulation-doped samples. We established a process that eliminates the well-known gate leakage problem. The hole density in our devices can be continuously tuned down to a record low value of 7 x 10(8) cm(-2). Remarkably, such a dilute system (with Fermi wavelength approaching 1 mu m) exhibits a non-activated conductivity that grows with temperature approximately as a power law at sufficiently low temperatures. We contrast it with the activated transport found in more disordered samples and discuss possible transport mechanisms in this strongly-interacting regime.
ISI:000251988900015
ISSN: 0217-9792
CID: 3856502